Auger recombination rates in dilute-As GaNAs semiconductor

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only...

Reduced auger recombination in mid-infrared semiconductor lasers

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters

The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In0.2Ga0.8N QW. By using self-consistent six-band k·p band formalism, the nitride active region consisting of 30 Å In0.2Ga0.8N and 10 Å GaN0.95As0.0...

Electron-Hole Recombination Rates for Auger Scattering in Graphene

We calculate electron-hole recombination rates for Auger scattering in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Auger processes so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than 1012 cm−2.

Effect of interface roughness on Auger recombination in semiconductor quantum wells

Effect of interface roughness on Auger recombination in semiconductor quantum wells Chee-Keong Tan,1,2,a Wei Sun,1 Jonathan J. Wierer, Jr.,1 and Nelson Tansu1,b 1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA 2Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New Yo...